A new method to suppress the In diffusion of InGaNAS/GaAs quantum wells grown by molecular beam epitaxy

被引：1

作者：

Peng, CS ^{[1
]}

Jouhti, T ^{[1
]}

Pavelescu, EM ^{[1
]}

Konttinen, J ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

THIN SOLID FILMS | 2003年 / 428卷 / 1-2期

关键词：

diffusion; X-ray diffraction; III-V semiconductors; molecular beam epitaxy; quantum well;

D O I：

10.1016/S0040-6090(02)01191-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a new method to suppress dramatically the group-III inter-diffusion of InGaNAs/GaAs quantum wells (QWs) during thermally annealing. By inserting a thin compressively strained layer (so-called diffusion-suppressing layer (DSL)) of InxdGa1-xdNydAs1-yd on either side of an InxqGa1-xqNyqAs1-yq QW, both the interdiffusion of In/Ga and photoluminescence (PL) blue shift are decreased significantly and the interfaces of the InGaNAs/GaAs(N) QW is much sharper after the same annealing operation. By detail PL and X-ray diffraction investigation of InGaAs/GaAs QWs, InGaNAs/GaAs QWs with and without DSLs, we believe that the strain at interfaces plays an important role on group-III interdiffusion. It was also found that a small amount of N incorporated in InGaAs/GaAs QW increased the In/Ga interdiffusion. The group-V interdiffusion was observed to be much less than that of group-III. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：176 / 180

页数：5

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