Significant increase in efficiency and limited toxicity of a solar cell based on Sb2Se3 with SnO2 as a buffer layer

被引：27

作者：

Guo, Huafei ^{[1
]}

Chen, Zhiwen ^{[1
]}

Wang, Xin ^{[1
]}

Cang, Qingfei ^{[1
]}

Ma, Changhao ^{[1
]}

Jia, Xuguang ^{[1
]}

Yuan, Ningyi ^{[1
]}

Ding, Jianning ^{[1
,2
]}

机构：

[1] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Peoples R China

[2] Jiangsu Univ, Inst Intelligent Flexible Mechatron, Zhenjiang 212013, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2019年 / 7卷 / 45期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM; DEPOSITION;

D O I：

10.1039/c9tc04169a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antimony selenide (Sb2Se3) thin films are attractive light-absorbing materials used in low-cost and highly efficient thin-film solar cells. In order to increase the efficiency of Sb2Se3 solar cells based on a tin oxide (SnO2) buffer layer, an ultrathin cadmium sulfide (CdS) film was introduced at the interface between the fluorine doped SnO2 glass (FTO) and the SnO2 film. Different thicknesses of the CdS/SnO2 compound buffer layers were used to form p-n junctions with the Sb2Se3 film. The ultrathin CdS layer not only increased the carrier connection and transport, but also decreased the conduction band offset and grain boundary density of the Sb2Se3 film. Lastly, an efficiency of 5.27% for the FTO/CdS (10 nm)/SnO2 (40 nm)/Sb2Se3/Au solar cells was obtained, which is higher than the reported highest efficiency of Sb2Se3 solar cells based on a SnO2 buffer layer.

引用

页码：14350 / 14356

页数：7

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