Internal quantum efficiency of stimulated emission of (λ=1.55 μm) InGaAsP/InP laser diodes

被引：3
|
作者：
Skrynnikov, GV [1 ]
Zegrya, GG [1 ]
Pikhtin, NA [1 ]
Slipchenko, SO [1 ]
Shamakhov, VV [1 ]
Tarasov, IS [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 02期
关键词：
D O I：
10.1134/1.1548672
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The stimulated emission (eta(i)(st)) of InGaAsP/InP separate-confinement double heterostructure lasers operating at lambda = 1.5-1.6 mum has been studied experimentally and theoretically. Laser heterostructures with a varied design of the waveguide layer were grown by MOCVD. The maximum internal quantum efficiency eta(i)(st) approximate to 97% was obtained in a structure with a double-step waveguide characterized by minimum leakage into the p-emitter above the generation threshold. The high value of eta(i)(st) is provided by low threshold and nonequilibrium carrier concentrations at the interface between the waveguide and p-emitter. The calculation yields eta(i)(st) values correlating well with the experimental data. (C) 2003 MAIK "Nauka/Interperiodica".
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收藏
页码：233 / 238
页数：6
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