Effects of sputtering and assisting ions on the orientation of titanium nitride films fabricated by ion beam assisted sputtering deposition from metal target

被引:21
作者
Zhang, Linao [1 ,2 ]
Tong, Shuo [3 ]
Liu, Haonan [1 ,2 ]
Li, Yinglan [1 ,2 ]
Wang, Zhi [1 ,2 ]
机构
[1] Beijing Inst Technol, Minist Educ China, Key Lab Cluster Sci, Beijing 100081, Peoples R China
[2] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
[3] Beijing BOE Optoelect Technol Co Ltd, Beijing 100176, Peoples R China
基金
中国国家自然科学基金;
关键词
TiN; Sputtering; Deposition; Ion beam technology; MGO THIN-FILMS; COATED CONDUCTORS; TIN FILMS;
D O I
10.1016/j.matlet.2016.02.100
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ion beam assisted titanium nitride (TiN) film has attracted much attention because its fast texture and high conductivity can be effectively applied in all-conductive superconducting coated conductor. In this work, TiN films were prepared by ion beam sputtering deposition from a metal titanium target. Effects of sputtering ion energy, assisting ion energy, assisting ion current and deposition temperature on the orientation and surface morphology were analyzed. The results indicate that assisting ion is an important factor in orientation selection, and high assisting ions and low assisting ion current could enhance the crystallinity. However, too high assisting ion energy and current can destroy the crystallinity in IBAD-TiN. This orientation selection can be attributed to the energy exchange between assisting ions and adatoms. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:304 / 307
页数:4
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