Modeling Nonquasi-Static Effects in SiGe HBTs

被引：7

作者：

Jacob, Jobymol ^{[1
,4
]}

DasGupta, Amitava ^{[4
]}

Schroeter, Michael ^{[2
,3
]}

Chakravorty, Anjan ^{[4
]}

机构：

[1] Coll Engn Kallooppara, Dept Elect Engn, Pathanamthitta 689603, India

[2] Tech Univ Dresden, D-1062 Dresden, Germany

[3] Univ Calif San Diego, La Jolla, CA 92093 USA

[4] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 07期

关键词：

Large-signal transients; nonquasi-static (NQS) effects; silicon-germanium heterojunction bipolar transistor (SiGe HBT); small-signal characteristics; subcircuit model; CHARGE CONTROL RELATION; BIPOLAR-TRANSISTORS; CIRCUIT; TRANSIENT; SIMULATION; PHASE;

D O I：

10.1109/TED.2010.2049077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The shortcomings of quasi-static and partitioned charge-based models are quantitatively demonstrated for 1-D SiGe heterojunction bipolar transistors. This points out the need to include higher order frequency-dependent terms, i.e., nonquasistatic effects in the model. Three different implementation-suitable modeling approaches are presented with associated formulations. Detailed comparison with the original theory is carried out to show the different levels of achievable accuracy of the formulated models. Circuit simulator implementations, parameter extractions, and validations of the models with device simulation results are also carried out. Frequency-and time-domain small-signal modeling results are found to be consistent and provide a high level of accuracy. For two selected cases among the various modeling approaches, results of large-signal transient switching are presented, showing excellent agreement with device simulation.

引用

页码：1559 / 1566

页数：8

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