Stability of Gold Bonding and Ti/Au Ohmic Contact Metallization to n-SiC in High Power Devices

被引：0

作者：

Kisiel, Ryszard ^{[1
]}

Guziewicz, Marek ^{[2
]}

Piotrowska, Anna ^{[2
]}

Kaminska, Eliana ^{[2
]}

Golaszewska, Krystyna ^{[2
]}

Kwietniewski, Norbert ^{[1
]}

Paszkowicz, Wojciech ^{[3
]}

Pagowska, Karolina ^{[4
]}

Ratajczak, Renata ^{[4
]}

Stonert, Anna ^{[4
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75, PL-00662 Warsaw, Poland

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Andzej Soltan Inst Nucl Studies, PL-00681 Warsaw, Poland

来源：

2009 32ND INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stability of SiC/Ti/Au ohmic contacts as well as the strength of Au wire connection onto n-SiC chips were investigated. The ohmic contact to n-SiC was formed by rapid thermal annealing of Ti film and Au metallization has been applied to form electrical connections using Au wire bonds. Long-term tests of the connections were performed in air at 400 degrees C. Evaluation of electrical parameters as well as stable morphology and structure of the metallization show good stability of the Au based electrical connections.

引用

页码：248 / +

页数：2

共 12 条

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