Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors

被引：23

作者：

Ryabova, L. I. ^{[1
]}

Khokhlov, D. R. ^{[2
,3
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia

[2] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[3] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

来源：

PHYSICS-USPEKHI | 2014年 / 57卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

IMPURITY STATES; DEEP IMPURITIES; PHOTODETECTORS; FILMS; CONDUCTIVITY; PERFORMANCE; RELAXATION; TRANSPORT; ALLOYS; FIELD;

D O I：

10.3367/UFNe.0184.201410b.1033

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are linked to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.

引用

页码：959 / 969

页数：11

共 7 条

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