Scattering efficiency and near field enhancement of active semiconductor plasmonic antennas at terahertz frequencies

被引：111

作者：

Giannini, Vincenzo ^{[1
]}

Berrier, Audrey ^{[1
]}

Maier, Stefan A. ^{[2
]}

Antonio Sanchez-Gil, Jose ^{[3
]}

Rivas, Jaime Gomez ^{[1
]}

机构：

[1] AMOLF, FOM, Inst Atom & Mol Phys, Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Expt Solid State Grp, London SW7 2AZ, England

[3] CSIC, Inst Estructura Mat, Madrid 28006, Spain

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

TRANSMISSION; SURFACE; RADIATION; SINGLE; RESONANCES; PULSES;

D O I：

10.1364/OE.18.002797

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Terahertz plasmonic resonances in semiconductor (indium antimonide, InSb) dimer antennas are investigated theoretically. The antennas are formed by two rods separated by a small gap. We demonstrate that, with an appropriate choice of the shape and dimension of the semiconductor antennas, it is possible to obtain large electromagnetic field enhancement inside the gap. Unlike metallic antennas, the enhancement around the semiconductor plasmonics antenna can be easily adjusted by varying the concentration of free carriers, which can be achieved by optical or thermal excitation of carriers or electrical carrier injection. Such active plasmonic antennas are interesting structures for THz applications such as modulators and sensors. (C) 2010 Optical Society of America

引用

页码：2797 / 2807

页数：11

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