Ni doping of semiconducting boron carbide

被引：17

作者：

Hong, Nina ^{[1
]}

Langell, M. A. ^{[2
]}

Liu, Jing ^{[1
]}

Kizilkaya, Orhan ^{[3
]}

Adenwalla, S. ^{[1
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] Univ Nebraska, Dept Chem, Lincoln, NE 68588 USA

[3] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70806 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

boron compounds; doping profiles; electrical resistivity; nickel; plasma CVD; semiconductor doping; semiconductor thin films; wide band gap semiconductors; X-ray photoelectron spectra; CHEMICAL-VAPOR-DEPOSITION; NEUTRON DETECTORS; THIN-FILMS; HETEROJUNCTION; SILICON; MECHANISM; NICKEL; DIODES;

D O I：

10.1063/1.3284205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

引用

页数：7

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