High resistance against hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12 thin films

被引：0
作者：
Seo, S
Kang, BS
Yoon, JG
Kim, CJ
Noh, TW
机构：
[1] Seoul Natl Univ, Res Ctr Oxide Elect, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151742, South Korea
[3] Univ Suwon, Dept Phys, Kyonggi Do 445743, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 12期
关键词：
hydrogen-induced degradation; ferroelectric; forming gas annealing; La-doped bismuth titanate; X-ray photoemission spectroscopy;
D O I：
10.1143/JJAP.41.7433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of forming gas annealing (FGA) were investigated on ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films fabricated by chemical solution deposition. In the case of low-temperature FGA below 350degreesC, the BLT films were found to have quite a hi-h resistance against hydrogen-induced degradation compared to PbZr0.4Ti0.6O3 (PZT) films. After FGA at 300degreesC, the BLT capacitors showed only a small reduction of remanent polarization and no deformation of their hysteresis loops while the PZT capacitors showed a large polarization degradation and serious hysteresis loop deformations. Hydrogen depth profiles, analyzed by secondary ion mass spectroscopy after FGA, showed comparable amounts of hydrogen penetration for both BLT and PZT films. X-ray photoemission spectroscopy measurements suggested that, for BLT films, the chemical stability of BLT may be responsible in part for the observed hydrogen annealing resistance.
引用
收藏
页码：7433 / 7436
页数：4
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