Raman spectroscopy on single- and few-layer graphene

被引：0
|
作者：
Graf, Davy [1 ]
Molitor, Francoise [1 ]
Ensslin, Klaus [1 ]
Stampfer, Christoph [1 ]
Jungen, Alain [1 ]
Hierold, Christofer [1 ]
Wirtz, Ludger [1 ]
机构：
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
graphite; raman spectroscopy;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on Raman measurements of single- and few-layer graphene flakes. Raman mapping in combination with scanning force microscopy allows us to locally relate the thickness of the graphite flake with the spectral properties. It turns out that the width of the D' line is highly sensitive to the transition from single- to double-layer graphene. The defect-induced D line is found to be most prominent at steps between sections of different height and along the edge of the graphite flake.
引用
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页码：623 / +
页数：2
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