Tunneling magnetoresistance in ferromagnetic junctions: Bias dependence

被引：5

作者：

Barnas, J

Lee, SF

Holody, P

Schelp, LF

Petroff, F

Fert, A

机构：

[1] Thomson CSF, CNRS, Unite Mixte Phys, F-91404 Orsay, France

[2] Adam Mickiewicz Univ, Inst Phys, Magnetism Theory Div, PL-60769 Poznan, Poland

来源：

ACTA PHYSICA POLONICA A | 1998年 / 93卷 / 02期

关键词：

D O I：

10.12693/APhysPolA.93.387

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electron tunneling between two ferromagnetic electrodes across an insulating barrier is analysed theoretically and experimentally. The barrier is either uniform or it includes a layer of small magnetic metallic particles. Particular attention is paid to the origin of the tunneling magnetoresistance and its bias dependence, as well as to the effects due to Coulomb blockade.

引用

收藏

页码：387 / 391

页数：5

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