Mechanism for hydrogen diffusion in amorphous silicon

被引:46
作者
Biswas, R [1 ]
Li, QM
Pan, BC
Yoon, Y
机构
[1] Iowa State Univ, Dept Phys, Microelect Res Ctr, Ames, IA 50011 USA
[2] Iowa State Univ, US DOE, Ames Lab, Ames, IA 50011 USA
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 04期
关键词
D O I
10.1103/PhysRevB.57.2253
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tight-binding molecular-dynamics calculations reveal a mechanism for hydro en diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicons and breaking their Si-Si bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network, have lower energies than H at the center of stretched Si-Si bonds, and can play a crucial role in hydrogen diffusion.
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页码:2253 / 2256
页数:4
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