Single atom diffusion of Pb on a Si(111)-7x7 surface

被引:2
作者
Kuntová, Z [1 ]
Jelínek, P [1 ]
Cháb, V [1 ]
Chvoj, Z [1 ]
机构
[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
关键词
surface diffusion; semiconducting surfaces; lead; Monte Carlo simulations; scanning tunneling microscopy;
D O I
10.1016/j.susc.2004.05.034
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Pb diffusion on the Si(111)-7 x 7 surface was studied with 16 different energy barriers. As a part of general problem of diffusion in the unit cell, some characteristics of diffusion (as frequency factor, effective energy barrier or differences in binding energy) was found analytically as a steady state solution of the master equation. The probability distribution of the occupation of particular sites was compared with the result of the Monte Carlo simulation and the STM experiment. Starting from the values obtained with the semi-empirical extended Huckel approximation, the diffusion barriers were adjusted to obtain a reasonable coherence with the experiment. The results of MC simulation and the analytical solution agree quite well and reproduce the dynamics of a Pb atom in the 7 x 7 unit cell. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:130 / 136
页数:7
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