Effect of Silicon Carbide Nanoparticles Addition on Structural and Dielectric Characteristics of PVA/CuO Nanostructures for Electronics Devices

被引：54

作者：

Al-Aaraji, Noor Al-Huda ^{[1
]}

Hashim, Ahmed ^{[2
]}

Hadi, Aseel ^{[3
]}

Abduljalil, Hayder M. ^{[4
]}

机构：

[1] Al Mustaqbal Univ Coll, Dept Med Phys, Babylon, Iraq

[2] Univ Babylon, Coll Educ Pure Sci, Dept Phys, Babylon, Iraq

[3] Univ Babylon, Coll Mat Engn, Dept Ceram & Bldg Mat, Babylon, Iraq

[4] Univ Babylon, Coll Sci, Dept Phys, Babylon, Iraq

来源：

SILICON | 2022年 / 14卷 / 09期

关键词：

Electronics devices; SiC; Nanocomposites; PVA; Dielectric properties; OXIDE NANOPARTICLES; NANOCOMPOSITES; FABRICATION; SENSORS; BLEND;

D O I：

10.1007/s12633-021-01265-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper aims to improve the dielectric properties of PVA/CuO-SiC nanocomposites to be useful in various electronics devices. The work includes preparation of PVA films and CuO-SiC NPs doped PVA by using casting method. The structural characteristics of PVA/CuO-SiC nanocomposites were tested which included FTIR and optical microscope. The dielectric properties were studied by using LCR meter at frequency range from 100 Hz to 5 MHz. The results of structural characteristics of PVA/CuO-SiC nanocomposites indicated that no chemical interactions between PVA and CuO-SiC NPs. Also, there are high distribution of CuO-SiC NPs in the PVA matrix. The experimental results of dielectric properties showed that increase in dielectric parameters of PVA with the increase in CuO-SiC NPs content. The dielectric parameters of PVA/CuO-SiC nanocomposites were changed with the increase in frequency. Finally, the structural and dielectric properties indicated to the PVA/CuO-SiC nanocomposites can be used in various electronics applications with lightweight, flexible and high corrosion resistance.

引用

页码：4699 / 4705

页数：7

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