Effect of Silicon Carbide Nanoparticles Addition on Structural and Dielectric Characteristics of PVA/CuO Nanostructures for Electronics Devices

This paper aims to improve the dielectric properties of PVA/CuO-SiC nanocomposites to be useful in various electronics devices. The work includes preparation of PVA films and CuO-SiC NPs doped PVA by using casting method. The structural characteristics of PVA/CuO-SiC nanocomposites were tested which included FTIR and optical microscope. The dielectric properties were studied by using LCR meter at frequency range from 100 Hz to 5 MHz. The results of structural characteristics of PVA/CuO-SiC nanocomposites indicated that no chemical interactions between PVA and CuO-SiC NPs. Also, there are high distribution of CuO-SiC NPs in the PVA matrix. The experimental results of dielectric properties showed that increase in dielectric parameters of PVA with the increase in CuO-SiC NPs content. The dielectric parameters of PVA/CuO-SiC nanocomposites were changed with the increase in frequency. Finally, the structural and dielectric properties indicated to the PVA/CuO-SiC nanocomposites can be used in various electronics applications with lightweight, flexible and high corrosion resistance.