Improved external cavity design for cesium D1 (894 nm) diode laser

被引：22

作者：

Andalkar, A ^{[1
]}

Lamoreaux, SK ^{[1
]}

Warrington, RB ^{[1
]}

机构：

[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2000年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.1319860

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have developed an external cavity diode laser for use near the cesium D1 transition at 894 nm, producing over 20 mW of single-mode power with a continuous tuning range of up to 25 GHz. Our mechanical design allows simple alignment and optimization of the cavity with very good passive stability, as temperature control of the diode is not coupled with changes in cavity length, and it could easily be used with diodes at other wavelengths. We detail the design and construction, and review the performance of the current system, which has been in operation for several years. (C) 2000 American Institute of Physics. [S0034-6748(00)00212-4].

引用

页码：4029 / 4031

页数：3

共 8 条

[1]

ANDALKAR A, UNPUB PHYS REV LETT

[2]

ANDALKAR A, 1998, B AM PHYS SOC, V43, P1272

[3] A simple extended-cavity diode laser [J].