Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

被引：168

作者：

Peng, H. Y. ^{[1
]}

Li, G. P. ^{[1
]}

Ye, J. Y. ^{[1
]}

Wei, Z. P. ^{[1
]}

Zhang, Z. ^{[1
]}

Wang, D. D. ^{[1
]}

Xing, G. Z. ^{[1
]}

Wu, T. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

基金：

新加坡国家研究基金会;

关键词：

diffusion; electrical conductivity transitions; electrical resistivity; elemental semiconductors; ferromagnetic materials; II-VI semiconductors; magnetic semiconductors; magnetic thin films; manganese; metal-semiconductor-metal structures; platinum; semiconductor thin films; semiconductor-metal boundaries; silicon; vacancies (crystal); wide band gap semiconductors; zinc compounds; NONVOLATILE MEMORY; INSULATOR;

D O I：

10.1063/1.3428365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428365]

引用

页数：3

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