Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients

This paper presents the results of applying a novel capacitance transient based technique to study the charge trapping dynamics of (HfO2),(SiO2)(1-x) (0.5 <= x <= 1) high-k dielectric layers. We detect positive charge generation during the stress and extracted the time-varying charge dynamics. The stress induced electron traps exhibits longer time constants than the as grown ones. The measured positive charge concentration is found to vary with hafnium concentration. Part of the positive charge is stable and can be detected by C-V measurements.