Characteristics of Ion Beam Assisted ITO Thin Films Deposited by RF Magnetron Sputtering

被引：6

作者：

Heo, Kyong Chan ^{[1
]}

Son, Phil Kook ^{[2
,3
]}

Sohn, Youngku ^{[4
]}

Yi, Jonghoon ^{[1
]}

Kwon, Jin Hyuk ^{[1
]}

Gwag, Jin Seog ^{[1
]}

机构：

[1] Yeungnam Univ, Dept Phys, Kyongsan 712749, South Korea

[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin, Gyeonggi Do, South Korea

[3] Kyung Hee Univ, Reg Innovat Ctr Component & Mat Informat Display, Yongin, Gyeonggi Do, South Korea

[4] Yeungnam Univ, Dept Chem, Kyongsan 712749, South Korea

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2014年 / 601卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Indium tin oxide; transmittance; x-ray diffraction; resistivity; ion beam; electro-optic property; OPTICAL-PROPERTIES; LOW-RESISTIVITY;

D O I：

10.1080/15421406.2014.940493

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Indium tin oxide (ITO) thin films have been deposited onto glass substrates at low temperature (100 degrees C) by the ion beam assisted RF magnetron sputter technique at different ion beam energy. The structural, surface morphology and electrical characteristics of the ITO thin films were investigated as a function of ion beam assisted energy. With increasing ion beam assisted energy from 0eV to 100eV, electrical resistivity of the ITO films reduced from 1.13 x 10(-3) omega center dot cm to 5.5 x 10(-4) omega center dot cm. Hall mobility and carrier concentration slightly increased, which attribute to slightly the crystal growth and harden ITO film. The preferential crystalline orientation of the sputtered films is observed gradually a change from the (222) to the (400) crystalline orientation with increasing ion beam assisted energy.

引用

页码：57 / 63

页数：7

共 15 条

[1] RF sputtering deposition of Ag/ITO coatings at room temperature [J].

Bertran, E ;

Corbella, C ;

Vives, M ;

Pinyol, A ;

Person, C ;

Porqueras, I .

SOLID STATE IONICS, 2003, 165 (1-4) :139-148

[2]

Birkholz M, 2006, THIN FILM ANALYSIS BY X-RAY SCATTERING, P1

[3] Effects of Substrate Temperature and Vacuum Annealing on Properties of ITO Films Prepared by Radio-Frquency Magnetron Sputtering [J].

Boonyopakorn, N. ;

Sripongpun, N. ;

Thanachayanont, C. ;

Dangtip, S. .

CHINESE PHYSICS LETTERS, 2010, 27 (10)

[4] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].

CHOPRA, KL ;

MAJOR, S ;

PANDYA, DK .

THIN SOLID FILMS, 1983, 102 (01) :1-46

[5] Fabrication and characterization of ITO thin films deposited by excimer laser evaporation [J].

Coutal, C ;

Azema, A ;

Roustan, JC .

THIN SOLID FILMS, 1996, 288 (1-2) :248-253

[6] The effect of annealing on structural, electrical and optical properties of nanostructured ITO films prepared by e-beam evaporation [J].

Fallah, Hamid Reza ;

Ghasemi, Mohsen ;

Hassanzadeh, Ali ;

Steki, Hadi .

MATERIALS RESEARCH BULLETIN, 2007, 42 (03) :487-496

[7] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[8]

Kim SK, 2003, NUMER HEAT TR B-FUND, V43, P43, DOI [10.1080/713836151, 10.1080/10407790390122014]

[9] HIGH CONDUCTING LARGE AREA INDIUM TIN OXIDE ELECTRODES FOR DISPLAYS PREPARED BY DC MAGNETRON SPUTTERING [J].

LATZ, R ;

MICHAEL, K ;

SCHERER, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A) :L149-L151

[10] Characterization of the oxidized indium thin films with thermal oxidation [J].

Lee, MS ;

Choi, WC ;

Kim, EK ;

Kim, CK ;

Min, SK .

THIN SOLID FILMS, 1996, 279 (1-2) :1-3

← 1 2 →