Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

被引：59

作者：

Goh, Youngin ^{[1
]}

Jeon, Sanghun ^{[2
]}

机构：

[1] Korea Univ, Dept Appl Phys, 2511 Sejongro, Sejong 339700, South Korea

[2] Korea Adv Inst Sci & Technol, Sch Elect Engn, 291 Daehakro, Daejeon 34141, South Korea

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 05期

关键词：

FILMS;

D O I：

10.1063/1.5040031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Greatly improved ferroelectricity with an excellent remanent polarization of 20 mu C/cm(2) and enhanced tunneling electroresistance (TER) were achieved with TiN/HtZrO(HZO)/p-type Ge ferroelectric tunnel junctions (FTJs) annealed at a high pressure of 200 atmosphere (atm.). We found that the enhanced ferroelectric characteristics can be ascribed to the effective formation of an orthorhombic phase at high pressures. This was verified by the combined study of grazing angle incidence X-ray diffraction, transmission electron microscopy, and hysteresis polarization curve analyses. in addition, using pulse switching measurements, we quantitatively evaluated the interfacial paraelectric capacitance (C-i) of HZO FTJs according to the annealing temperature. HZO films annealed at 550 degrees C and 200 atm, exhibited an excellent TER effect ratio of 20 due to the extra paraelectric layer between the ferroelectric layer and the bottom electrode and a relatively high remanent polarization. Published by AIP Publishing.

引用

页数：5

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