Silicon-Germanium Heterojunction Photodetectors for On-Chip Optoelectronics and Communications

被引：1

作者：

Benedikovic, Daniel ^{[1
,2
]}

Virot, Leopold ^{[3
,4
]}

Aubin, Guy ^{[2
]}

Hartmann, Jean-Michel ^{[3
,4
]}

Amar, Farah ^{[2
]}

Le Roux, Xavier ^{[2
]}

Alonso-Ramos, Carlos ^{[2
]}

Marris-Morini, Delphine ^{[2
]}

Cassan, Eric ^{[2
]}

Boeuf, Frederic ^{[5
]}

Fedeli, Jean-Marc ^{[3
,4
]}

Szelag, Bertrand ^{[3
,4
]}

Vivien, Laurent ^{[2
]}

机构：

[1] Univ Zilina, Dept Multimedia & Informat Commun Technol, Zilina 01026, Slovakia

[2] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France

[3] LETI, CEA, F-38054 Grenoble, France

[4] Univ Grenoble Alpes, F-38054 Grenoble, France

[5] STMicroelect Silicon Technol Dev, F-38926 Crolles, France

来源：

2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021) | 2021年

关键词：

silicon photonics; germanium; silicon-on-insulator; pin photodetectors; CMOS technology; integration;

D O I：

10.1109/GFP51802.2021.9673940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical photodetectors are at the forefront of integrated photonics research as fundamental building blocks for optoelectronic systems and communication links However, chip-integrated photodetectors with improved performances constitute on-going challenges for such applications. We present recent progress in high-speed silicon-germanium photodetectors fabricated on silicon-foundry-compatible platforms.

引用

页数：2

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