Sub-10 nm-scale capacitors and tunnel junctions measurements by SMM coupled to RF interferometry

被引:0
|
作者
Wang, F. [1 ]
Dargent, T. [1 ]
Ducatteau, D. [1 ]
Dambrine, G. [1 ]
Haddadi, K. [1 ]
Clement, N. [1 ]
Theron, D. [1 ]
Legrand, B. [2 ,3 ]
机构
[1] Univ Lille 1, Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, Ave Poincare,CS 60069, F-59652 Villeneuve Dascq, France
[2] CNRS, LAAS, F-31400 Toulouse, France
[3] Univ Toulouse, LAAS, F-31400 Toulouse, France
来源
2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2015年
关键词
scanning probe microscopy; microwave imaging; interferometry; attofarad capacitances; FIELD MICROWAVE MICROSCOPY; SILICON; TRANSISTORS; RESOLUTION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed an adjustable Interferometer combined to a Scanning Microwave Microscopy (ISMM) to characterize the impedance of thousands of nanocapacitors. The adjustable interferometer allows the choice of the interference frequency within +/- 50 MHz as well as the choice of the impedance range where the interference occurs. Calibration is investigated using metal-insulating-semiconductor capacitances. The ISMM allows quantitative characterization of tiny capacitors with size reaching sub-10 nm and capacitance value around the aF with a limit of resolution of about 0.5 aF at 7.8 GHz. A water meniscus parasitic capacitance is introduced to explain the discrepancy between measured and theoretical values over the 5 to 100-nm nanodot diameter range. The ISMM allows also measuring tunnel junctions made with very thin Al2O3 dielectric layers.
引用
收藏
页码:658 / 661
页数:4
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