Impact of boron incorporation on properties of silicon solar cells employing p-type polycrystalline silicon grown by aluminum-induced crystallization

被引：6

作者：

Masuda, Shota ^{[1
]}

Gotoh, Kazuhiro ^{[1
]}

Takahashi, Isao ^{[1
]}

Nakamura, Kyotaro ^{[2
]}

Ohshita, Yoshio ^{[3
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Nagoya, Aichi 4648603, Japan

[2] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan

[3] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 08期

关键词：

CARRIER-SELECTIVE CONTACTS; PARTIAL REAR CONTACTS; PASSIVATED CONTACTS; AMORPHOUS-SILICON; SI FILMS; EFFICIENCY; GLASS; TEMPERATURE; LAYERS;

D O I：

10.7567/JJAP.57.08RB12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on our attempt to increase the carrier density in the p-type polycrystalline silicon (poly-Si) layers grown by aluminum-induced crystallization (AIC) employing a B-doped Si target. Hall measurement revealed that we could obtain a lower-resistance and heavily doped p-type continuous poly-Si thin layer formed by AIC using B-doped a-Si. According to our evaluation of tunnel oxide passivated contact (TOPCon) solar cells with AIC-grown poly-Si, the AIC-TOPCon solar cells fabricated at 570 degrees C using B-doped a-Si showed higher conversion efficiency of 13.5% than that of 12.8% when using nondoped a-Si. It is considered that the cell characteristics, particularly FF and V-oc, were improved owing to the lower series resistance and higher carrier density since both Al and B were successfully incorporated into the AIC-grown poly-Si. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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