Multilevel Atomic-Scale Transistors Based on Metallic Quantum Point Contacts

被引:27
|
作者
Xie, Fangqing [3 ,4 ]
Maul, Robert [1 ]
Obermair, Christian [3 ,4 ]
Wenzel, Wolfgang [1 ,2 ]
Schoen, Gerd [1 ,2 ,4 ,5 ]
Schimmel, Thomas [1 ,2 ,3 ,4 ]
机构
[1] Forschungszentrum Karlsruhe, Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[2] Forschungszentrum Karlsruhe, Karlsruhe Inst Technol, Ctr Funct Nanostruct, D-76021 Karlsruhe, Germany
[3] Univ Karlsruhe, Karlsruhe Inst Technol, Inst Appl Phys, D-76131 Karlsruhe, Germany
[4] Univ Karlsruhe, Karlsruhe Inst Technol, Ctr Funct Nanostruct, D-76131 Karlsruhe, Germany
[5] Univ Karlsruhe, Karlsruhe Inst Technol, Inst Theoret Festkorperphys, D-76131 Karlsruhe, Germany
关键词
FABRICATION; TRANSPORT; NANOWIRES;
D O I
10.1002/adma.200902953
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Multilevel logic and storage devices on the atomic scale are of great interest as they allow more efficient data storage and processing with a smaller number of logical gates. Here we demonstrate a multilevel atomic quantum transistor, allowing for the gate-controlled switching between different quantized conducting states providing a basis for the future development of novel ultra-small quantum-electronic devices.
引用
收藏
页码:2033 / +
页数:5
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