Room temperature growth of high crystalline quality Cu3N thin films by modified activated reactive evaporation

被引:44
作者
Sahoo, Guruprasad [1 ]
Meher, S. R. [2 ]
Jain, Mahaveer K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
[2] Vellore Inst Technol Univ, Sch Adv Sci, Vellore 632014, Tamil Nadu, India
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2015年 / 191卷
关键词
Semiconductor; Cu3N; Thin film; Modified activated reactive evaporation; COPPER NITRIDE FILMS; SUBSTRATE-TEMPERATURE; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; THERMAL-STABILITY; DEPOSITION; MECHANISM; TIN;
D O I
10.1016/j.mseb.2014.10.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly crystalline copper nitride (Cu3N) thin films have been deposited on glass substrates at room temperature by a novel and commercially viable growth technique, known as modified activated reactive evaporation (MARE). The effects of change in radio frequency (RF) power and deposition pressure on the structural and optical properties of the films have been investigated. RF power plays a significant role for the preferential growth of these films along a particular plane whereas the deposition pressure has comparatively lesser impact on the same. However, the lattice parameter, film thickness and optical band gap are found to be strongly dependent on the deposition pressure. The MARE grown Cu3N films undergo complete decomposition into metallic Cu upon vacuum annealing at 400 degrees C which makes them promising candidates to be used in write once optical recording media. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:7 / 14
页数:8
相关论文
共 31 条
  • [1] CU3N THIN-FILM FOR A NEW LIGHT RECORDING MEDIA
    ASANO, M
    UMEDA, K
    TASAKI, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10): : 1985 - 1986
  • [2] Low-temperature growth of polycrystalline GaN films using modified activated reactive evaporation
    Biju, Kuyyadi P.
    Subrahmanyam, A.
    Jain, Mahaveer K.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (08) : 2275 - 2280
  • [3] Growth, structural and optical properties of Cu3N films
    Borsa, DM
    Boerma, DO
    [J]. SURFACE SCIENCE, 2004, 548 (1-3) : 95 - 105
  • [4] Growth and properties of Cu3N films and Cu3N/γ′-Fe4N bilayers
    Borsa, DM
    Grachev, S
    Presura, C
    Boerma, DO
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (10) : 1823 - 1825
  • [5] Effect of substrate temperature on the properties of copper nitride thin films deposited by reactive magnetron sputtering
    Cho, Shinho
    [J]. CURRENT APPLIED PHYSICS, 2012, 12 : S44 - S47
  • [6] Study and control of both target-poisoning mechanisms and reactive phenomenon in reactive planar magnetron cathodic sputtering of TiN
    Combadiere, L
    Machet, J
    [J]. SURFACE & COATINGS TECHNOLOGY, 1996, 82 (1-2) : 145 - 157
  • [7] Effect of substrate temperature on the physical properties of copper nitride films by r.f. reactive sputtering
    Ghosh, S
    Singh, F
    Choudhary, D
    Avasthi, DK
    Ganesan, V
    Shah, P
    Gupta, A
    [J]. SURFACE & COATINGS TECHNOLOGY, 2001, 142 : 1034 - 1039
  • [8] Thermal stability of copper nitride thin films: The role of nitrogen migration
    Gonzalez-Arrabal, R.
    Gordillo, N.
    Martin-Gonzalez, M. S.
    Ruiz-Bustos, R.
    Agullo-Lopez, F.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (10)
  • [9] DC triode sputtering deposition and characterization of N-rich copper nitride thin films: Role of chemical composition
    Gordillo, N.
    Gonzalez-Arrabal, R.
    Martin-Gonzalez, M. S.
    Olivares, J.
    Rivera, A.
    Briones, F.
    Agullo-Lopez, F.
    Boerma, D. O.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (19) : 4362 - 4367
  • [10] Reactive DC magnetron sputter deposited copper nitride nano-crystalline thin films: Growth and characterization
    Hadian, F.
    Rahmati, A.
    Movla, H.
    Khaksar, M.
    [J]. VACUUM, 2012, 86 (08) : 1067 - 1072