Single-electron quantum dots in silicon MOS structures

被引：6
作者：
Khoury, M
Gunther, A
Milicic, S
Rack, J
Goodnick, SM
Vasileska, D
Thornton, TJ
Ferry, DK [1 ]
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 71卷 / 04期
关键词：
D O I：
10.1007/s003390000554
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.
引用
收藏
页码：415 / 421
页数：7
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