Nanoporous structure formation on the surface of Ge by ion beam irradiation

被引:2
作者
Oishi, Tomoya [1 ]
Nitta, Noriko [1 ,2 ]
机构
[1] Kochi Univ Technol, Sch Environm Sci & Technol, Kochi 7828502, Japan
[2] Kochi Univ Technol, Res Inst, Ctr Nanotechnol, Kochi 7828502, Japan
关键词
COMPOUND SEMICONDUCTORS; VOID FORMATION; GASB; INSB; GERMANIUM; AMORPHIZATION; IMPLANTATION; BOMBARDMENT; TEMPERATURE; DEPENDENCE;
D O I
10.7567/JJAP.57.091301
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ion beam induced formation of nanoporous structures on the surface of Ge under controlled conditions of ion dose, flux, and irradiation angle using a focused ion beam was investigated by electron microscopy. The formation of large-scale rianoporous structures on the surface of the Ge specimens with increasing ion dose and increasing flux was observed via nanostructurai characterization using scanning electron microscopy and transmission electron microscopy (TEM). Compared with the structure formed under irradiation at 0 degrees, that formed under irradiation at 45 degrees was tilted and large-scale. These results suggest that the number of point defects per unit volume of surface is important for the formation of a nanoporous structure. TEM observations revealed that the nanoporous structural features formed during the initial process were not voids but surface roughness. This mechanism differs from the nanoporous structure formation mechanism of GaSb and InSb The growth of the nanoporous structure in the vertical direction was promoted until the ion dose was 1 x 10(21) ions/m(2) or greater. At ion doses greater than 1 x 10(21)ions/m(2), the growth was saturated. The wall thickness remained almost constant with increasing ion dose. (C) 2018 The Japan Society of Applied Physics
引用
收藏
页数:6
相关论文
共 40 条
  • [1] Morphology of ion irradiation induced nano-porous structures in Ge and Si1-xGex alloys
    Alkhaldi, H. S.
    Kremer, F.
    Mota-Santiago, P.
    Nadzri, A.
    Schauries, D.
    Kirby, N.
    Ridgway, M. C.
    Kluth, P.
    [J]. JOURNAL OF APPLIED PHYSICS, 2017, 121 (11)
  • [2] Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloys
    Alkhaldi, H. S.
    Kluth, P.
    Kremer, F.
    Lysevych, M.
    Li, L.
    Ridgway, M. C.
    Williams, J. S.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (12)
  • [3] Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys
    Alkhaldi, H. S.
    Kremer, F.
    Bierschenk, T.
    Hansen, J. L.
    Nylandsted-Larsen, A.
    Williams, J. S.
    Ridgway, M. C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (09)
  • [4] Andersen H. H., 1977, THE STOPPING AND RAN, V3
  • [5] CHARACTERIZATION OF DAMAGE IN ION-IMPLANTED GE
    APPLETON, BR
    HOLLAND, OW
    NARAYAN, J
    SCHOW, OE
    WILLIAMS, JS
    SHORT, KT
    LAWSON, E
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 711 - 712
  • [6] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS
    BIERSACK, JP
    HAGGMARK, LG
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2): : 257 - 269
  • [7] ANOMALOUS BEHAVIOR OF ION-IMPLANTED GASB
    CALLEC, R
    FAVENNEC, PN
    SALVI, M
    LHARIDON, H
    GAUNEAU, M
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (15) : 1872 - 1874
  • [8] CROSS-SECTIONAL HIGH-RESOLUTION ELECTRON-MICROSCOPY INVESTIGATION OF ARGON-ION IMPLANTATION-INDUCED AMORPHIZATION OF SILICON
    CLAVERIE, A
    VIEU, C
    FAURE, J
    BEAUVILLAIN, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4415 - 4423
  • [9] 60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb
    Datta, D. P.
    Garg, S. K.
    Satpati, B.
    Sahoo, P. K.
    Kanjilal, A.
    Dhara, S.
    Kanjilal, D.
    Som, T.
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (14)
  • [10] Evolution of porous network in GaSb under normally incident 60 keV Ar+-ion irradiation
    Datta, D. P.
    Kanjilal, A.
    Garg, S. K.
    Sahoo, P. K.
    Satpati, B.
    Kanjilal, D.
    Som, T.
    [J]. APPLIED SURFACE SCIENCE, 2014, 310 : 189 - 195