Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

被引：72

作者：

Chen, H. ^{[1
,2
]}

Verheyen, P. ^{[1
]}

De Heyn, P. ^{[1
]}

Lepage, G. ^{[1
]}

De Coster, J. ^{[1
]}

Balakrishnan, S. ^{[1
]}

Absil, P. ^{[1
]}

Roelkens, G. ^{[2
]}

Van Campenhout, J. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Univ Ghent, IMEC, Photon Res Grp, Dept Informat Technol, B-9000 Ghent, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 21期

关键词：

JUNCTION LEAKAGE; HIGH-PERFORMANCE; GE; SI; TEMPERATURE; DEPENDENCE; PLATFORM; MODEL;

D O I：

10.1063/1.4953147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. Published by AIP Publishing.

引用

页数：9

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