Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

被引：69

作者：

Chen, H. ^{[1
,2
]}

Verheyen, P. ^{[1
]}

De Heyn, P. ^{[1
]}

Lepage, G. ^{[1
]}

De Coster, J. ^{[1
]}

Balakrishnan, S. ^{[1
]}

Absil, P. ^{[1
]}

Roelkens, G. ^{[2
]}

Van Campenhout, J. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Univ Ghent, IMEC, Photon Res Grp, Dept Informat Technol, B-9000 Ghent, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 21期

关键词：

JUNCTION LEAKAGE; HIGH-PERFORMANCE; GE; SI; TEMPERATURE; DEPENDENCE; PLATFORM; MODEL;

D O I：

10.1063/1.4953147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. Published by AIP Publishing.

引用

页数：9

共 25 条

[1] Åberg I, 2010, INT EL DEVICES MEET
[2] Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's
Absil, Philippe P.
Verheyen, Peter
De Heyn, Peter
Pantouvaki, Marianna
Lepage, Guy
De Coster, Jeroen
Van Campenhout, Joris
[J]. OPTICS EXPRESS, 2015, 23 (07): : 9369 - 9378
[3] High phosphorous doped germanium: Dopant diffusion and modeling
Cai, Yan
Camacho-Aguilera, Rodolfo
Bessette, Jonathan T.
Kimerling, Lionel C.
Michel, Jurgen
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)
[4] Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current
DeRose, Christopher T.
Trotter, Douglas C.
Zortman, William A.
Starbuck, Andrew L.
Fisher, Moz
Watts, Michael R.
Davids, Paul S.
[J]. OPTICS EXPRESS, 2011, 19 (25): : 24897 - 24904
[5] Characterization of dark current in Ge-on-Si photodiodes
DiLello, N. A.
Johnstone, D. K.
Hoyt, J. L.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)
[6] Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide
DiLello, Nicole A.
Hoyt, Judy L.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (03)
[7] Fermi-level pinning and charge neutrality level in germanium
Dimoulas, A.
Tsipas, P.
Sotiropoulos, A.
Evangelou, E. K.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (25)
[8] Trap-Assisted Tunneling in Deep-Submicron Ge PFET Junctions
Eneman, G.
Gonzalez, M. Bargallo
Hellings, G.
De Jaeger, B.
Wang, G.
Mitard, J.
De Meyer, K.
Claeys, C.
Meuris, M.
Heyns, M. M.
Hoffmann, T. Y.
Simoen, E.
[J]. GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 2, 2010, 28 (05): : 143 - 152
[9] P plus /n junction leakage in thin selectively grown Ge-in-STI substrates
Eneman, G.
Yang, R.
Wang, G.
De Jaeger, B.
Loo, R.
Claeys, C.
Caymax, M.
Meuris, M.
Heyns, M. M.
Simoen, E.
[J]. THIN SOLID FILMS, 2010, 518 (09) : 2489 - 2492
[10] Defects, Junction Leakage and Electrical Performance of Ce pFET Devices
Eneman, G.
Simoen, E.
Yang, R.
De Jaeger, B.
Wang, G.
Mitard, J.
Hellings, G.
Brunco, D. P.
Loo, R.
De Meyer, K.
Caymax, M.
Claeys, C.
Meuris, M.
Heyns, M. M.
[J]. ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 195 - +

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