Local strain in tunneling transistors based on graphene nanoribbons

被引：21

作者：

Lu, Yang ^{[1
]}

Guo, Jing ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

基金：

美国国家科学基金会;

关键词：

field effect transistors; graphene; nanostructured materials; phonons; tunnelling; NANOTUBE TRANSISTORS;

D O I：

10.1063/1.3479915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A band-to-band tunneling field-effect transistor (FET) can achieve a subthreshold slope steeper than 60 mV/dec at room temperature, but the on-current is low due to existence of the tunneling barrier. Graphene has a monolayer-thin body which is amenable to strain. By using self-consistent quantum transport simulations, we show that with local strain applied at the tunneling junction between the source and the channel in a graphene nanoribbon tunneling FET, the on-current can be significantly improved by over a factor of 10 with the same off-current, no matter at the ballistic limit or in the presence of inelastic phonon scattering. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479915]

引用

页数：3

共 22 条

[1] Band-to-band tunneling in carbon nanotube field-effect transistors [J].

Appenzeller, J ;

Lin, YM ;

Knoch, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 93 (19) :196805-1

[2] Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design [J].

Appenzeller, J ;

Lin, YM ;

Knoch, J ;

Chen, ZH ;

Avouris, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) :2568-2576

[3] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[4] A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs [J].

Chen, Q ;

Agrawal, B ;

Meindl, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (06) :1086-1090

[5] Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec [J].

Choi, Woo Young ;

Park, Byung-Gook ;

Lee, Jong Duk ;

Liu, Tsu-Jae King .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :743-745

[6] Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering [J].

Guinea, F. ;

Katsnelson, M. I. ;

Geim, A. K. .

NATURE PHYSICS, 2010, 6 (01) :30-33

[7] Role of phonon scattering in carbon nanotube field-effect transistors [J].

Guo, J ;

Lundstrom, M .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[8] Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors [J].

Koswatta, Siyuranga O. ;

Lundstrom, Mark S. ;

Nikonov, Dmitri E. .

APPLIED PHYSICS LETTERS, 2008, 92 (04)

[9]

Koswatta SO, 2005, INT EL DEVICES MEET, P525

[10] Measurement of the elastic properties and intrinsic strength of monolayer graphene [J].

Lee, Changgu ;

Wei, Xiaoding ;

Kysar, Jeffrey W. ;

Hone, James .

SCIENCE, 2008, 321 (5887) :385-388

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