Irradiation studies of silicon pixel detectors for CMS

被引：8

作者：

Bolla, G

Bortoletto, D

Giolo, K

Horisberger, R

Rohe, T

Rott, C

Roy, A ^{[1
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 501卷 / 01期

关键词：

LHC; CMS; tracking; pixel; silicon; radiation hardness;

D O I：

10.1016/S0168-9002(02)02026-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Prototype n(+) on n sensors with different guard rings and p-stop isolation designs were developed for the CMS Forward Pixel System. The prototype sensors were irradiated to a fluence equivalent to that expected after 6 years of operation at the LHC. I-V characteristics of these sensors after irradiation were measured. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：160 / 163

页数：4