Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer

被引：7
作者：
Xu, Mingsheng [1 ]
Zhou, Quanbin [1 ]
Zhang, Heng [2 ]
Wang, Hong [1 ]
Zhang, Xichun [1 ]
机构：
[1] S China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 94卷
基金：
国家高技术研究发展计划(863计划); 中国博士后科学基金; 中国国家自然科学基金;
关键词：
p-type AlGaN; Hole injection layer; Near-ultraviolet light-emitting diode; Internal quantum efficiency; LIGHT-EMITTING-DIODES; ELECTRON-BLOCKING LAYER; GAN; UV;
D O I：
10.1016/j.spmi.2016.03.048
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate a novel near-ultraviolet light-emitting diode (NUV-LED) with a p-type AIGaN (pAlGaN) hole injection layer to replace the conventional p-type GaN layer. The optical properties are studied numerically with simulations. Our calculated results indicate that a pAlGaN layer can significantly improve both light output power and internal quantum efficiency of a NUV-LED. The light power of NUV-LED with constant and gradually increasing Al content of the pAlGaN layer increases by 215% and 266% compared to a conventional LED. We also find that the elimination of the interface barrier and suppression of the polarization field are the key factors that lead to the improved NOV-LED performance. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：25 / 29
页数：5
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