Annealing effects of co-doping with Al and Sb on structure and optical-electrical properties of the ZnO thin films

被引：40

作者：

Zhong, W. W. ^{[1
]}

Liu, F. M. ^{[1
]}

Cai, L. G. ^{[1
]}

Zhou, C. C. ^{[1
]}

Ding, P. ^{[1
]}

Zhang, H. ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Key Lab Micronano Measurement Manipulat & Phys, Sch Phys & Nucl Energy Engn, Dept Phys,Minist Educ, Beijing 100191, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 499卷 / 02期

关键词：

ZnO thin films; Co-doped with Al and Sb; Sol-gel spin-coating method; Annealing at different temperature; Optical and electrical properties; DEPOSITION; SUBSTRATE;

D O I：

10.1016/j.jallcom.2010.03.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The ZnO thin films co-doped with Al and Sb have been successfully deposited by a sol-gel spin-coating method on glass substrates and annealed at different temperature for 2 h in air. The annealing effects of different temperature on the structure and biaxial stress were characterized by X-ray diffraction. The results revealed that the annealed ZnO thin films mainly consist of ZnO with wurtzite structure, and the biaxial stress is lower during annealed at 550 degrees C. The annealed films have high transmittance in the visible region and show sharp absorption edges in the UV region. The optical band gap E(g) values are 2.95, 3.03, 3.18 and 3.15 eV, which corresponding to the films annealed at 450, 500, 550, 600 degrees C, respectively. The resistivity of thin films reaches a minimum when the annealing temperature at 550 degrees C. The conducting mechanism is contributed to Sb substitute for Zn inducing two corresponding Zn vacancies. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：265 / 268

页数：4

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