An 80 GHz Power Amplifier with 17.4 dBm Output Power and 18% PAE in 22 nm FD-SOI CMOS for Binary-Phase Modulated Radars

被引：1

作者：

Li, Songhui ^{[1
]}

Cui, Mengqi ^{[1
]}

Xu, Xin ^{[1
]}

Szilagyi, Laszlo ^{[1
]}

Carta, Corrado ^{[1
]}

Finger, Wolfgang ^{[2
]}

Ellinger, Frank ^{[1
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-01069 Dresden, Germany

[2] GLOBALFOUNDRIES Dresden, D-01109 Dresden, Germany

来源：

2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2020年

关键词：

CMOS integrated circuits; Silicon-on-insulator; Power amplifiers; Differential amplifiers; Phase control; Millimeter wave integrated circuits;

D O I：

10.1109/APMC47863.2020.9331405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a power amplifier operating from 75GHz to 85GHz and integrated with a binary phase modulator in a 22 nm FD-SOI technology. The circuit can serve directly as a transmitter in a 76 GHz to 81 GHz binary phase modulation multiple-input-multiple-output frequency-modulated continuous-wave (BPM-MIMO-FMCW) radar system. Measurements of the fabricated prototypes show a peak gain of 21.7 dB and a binary phase control of 180 degrees +/- 2 degrees from 60 GHz to 100 GHz. From 75 GHz to 85 GHz the maximum output power is 17.4dBm in saturation and 14.6dBm at 1dB-compression-point with a peak power added efficiency (PAE) of 18 %. To the best knowledge of the authors, this is the first prototype of such a transmitter for 76 GHz to 81GHz BPM-MIMO-FMCW radars in a 22 nm technology. It offers the best combination of power gain, output power, PAE and bandwidth compared to the state of the art for CMOS power amplifiers around 80 GHz and implemented in deeply-scaled technologies with gate length below 40 nm.

引用

页码：278 / 280

页数：3

共 11 条

[1] An E-Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS
Callender, Steven
Pellerano, Stefano
Hull, Christopher
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2019, 54 (05) : 1266 - 1273
[2] Callender S, 2017, IEEE RAD FREQ INTEGR, P402, DOI 10.1109/RFIC.2017.7969103
[3] An E-Band Compact Power Amplifier for Future Array-Based Backhaul Networks in 22nm FD-SOI
Celik, Umut
Reynaert, Patrick
[J]. 2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2019, : 187 - 190
[4] Millimeter-Wave Low-Noise Amplifier Design in 28-nm Low-Power Digital CMOS
Fritsche, David
Tretter, Gregor
Carta, Corrado
Ellinger, Frank
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (06) : 1910 - 1922
[5] Jayamon JA, 2016, IEEE RAD FREQ INTEGR, P262, DOI 10.1109/RFIC.2016.7508301
[6] IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF
Kolodinski, S.
Mart, C.
Weinreich, W.
Sessi, V.
Trommer, J.
Chohan, T.
Mulaosmanovic, H.
Weber, W. M.
Slesazeck, S.
Peng, B.
Esposito, C.
Zimmermann, Y.
Schroeter, M.
Xu, X.
Testa, P. V.
Carta, C.
Ellinger, F.
Lehmann, S.
Drescher, M.
Wiatr, M.
[J]. 49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019), 2019, : 74 - 77
[7] Larie Aurelien, 2015, 2015 IEEE International Solid-State Circuits Conference (ISSCC). Digest of Technical Papers, P48, DOI 10.1109/ISSCC.2015.7062919
[8] Lee ST, 2018, PROC EUR SOLID-STATE, P34, DOI 10.1109/ESSCIRC.2018.8494256
[9] Lim JS, 2004, 34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, P377
[10] Medra A, 2014, PROC EUR SOLID-STATE, P183, DOI 10.1109/ESSCIRC.2014.6942052

← 1 2 →