Structure investigations of nonpolar GaN layers

被引：10

作者：

Neumann, W. ^{[1
]}

Mogilatenko, A. ^{[1
]}

Wernicke, T. ^{[2
]}

Richter, E. ^{[2
]}

Weyers, M. ^{[2
]}

Kneissl, M. ^{[2
,3
]}

机构：

[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[2] Ferdinand Braun Inst Hochstfrequenztech, Berlin, Germany

[3] Tech Univ Berlin, Inst Solid State Phys, Berlin, Germany

来源：

JOURNAL OF MICROSCOPY | 2010年 / 237卷 / 03期

关键词：

Crystal defects; GaN; nonpolar films; PLANE; MICROSTRUCTURE; ORIENTATION; GROWTH; TEM;

D O I：

10.1111/j.1365-2818.2009.03249.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The microstructure of nonpolar m-plane (1 (1) over bar 00) oriented GaN layers deposited on (100)gamma-LiAlO2 was analysed by transmission electron microscopy. This study shows that the films contain a large number of defects. The most dominant defects in the m-plane GaN are intrinsic I-1 basal plane stacking faults (similar to 10(4) cm(-1)), threading dislocations (similar to 10(9) cm(-2)) as well as a complex defect network consisting of planar defects located on prismatic {10 (1) over bar0} GaN and differently inclined pyramidal planes. A large number of the stacking faults nucleate at the GaN/LiAlO2 interface. Furthermore, the inclined planar defects act as additional nucleation sites for the basal plane stacking faults. A decreasing crystal quality with an increasing layer thickness can be explained by this defect formation mechanism.

引用

页码：308 / 313

页数：6

共 23 条

[1] M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy [J].