Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes

被引：0

作者：

Caudano, Y ^{[1
]}

Weldon, MK ^{[1
]}

Chabal, YJ ^{[1
]}

Stefanov, BB ^{[1
]}

Raghavachari, K ^{[1
]}

Jacobson, DC ^{[1
]}

Christman, SB ^{[1
]}

Chaban, EE ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV | 1998年 / 36卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes.

引用

页码：365 / 372

页数：8