Device simulations of field effect transistors on hydrogen-terminated diamond surfaces

被引：0
作者：
Tsugawa, K [1 ]
Morita, K [1 ]
Kawarada, H [1 ]
机构：
[1] Waseda Univ, Sch Sci & Engn, Dept Elect Informat & Commun, Shinjyuku Ku, Tokyo 1698799, Japan
来源：
DIAMOND FILMS AND TECHNOLOGY | 1997年 / 7卷 / 5-6期
关键词：
hydrogen-terminated diamond surface; p-type semiconductive layer; MESFET; MOSFET;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：354 / 354
页数：1
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