Device simulations of field effect transistors on hydrogen-terminated diamond surfaces

被引：0
作者：
Tsugawa, K [1 ]
Morita, K [1 ]
Kawarada, H [1 ]
机构：
[1] Waseda Univ, Sch Sci & Engn, Dept Elect Informat & Commun, Shinjyuku Ku, Tokyo 1698799, Japan
来源：
DIAMOND FILMS AND TECHNOLOGY | 1997年 / 7卷 / 5-6期
关键词：
hydrogen-terminated diamond surface; p-type semiconductive layer; MESFET; MOSFET;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：354 / 354
页数：1
相关论文
共 50 条
  • [31] An adaptive mixed scheme for energy-transport simulations of field-effect transistors
    Holst, S
    Jüngel, A
    Pietra, P
    SIAM JOURNAL ON SCIENTIFIC COMPUTING, 2004, 25 (05) : 1698 - 1716
  • [32] Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
    Liu, Jiangwei
    Teraji, Tokuyuki
    Da, Bo
    Ohsato, Hirotaka
    Koide, Yasuo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (04) : 1680 - 1685
  • [33] Recent progress in deep-depletion diamond metal-oxide-semiconductor field-effect transistors
    Masante, Cedric
    Rouger, Nicolas
    Pernot, Julien
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (23)
  • [34] Ballistic current in metal-oxide-semiconductor field-effect transistors: The role of device topology
    Pourghaderi, M. Ali
    Magnus, Wim
    Soree, Bart
    Meuris, Marc
    De Meyer, Kristin
    Heyns, Marc
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
  • [35] Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C
    Liu, J-W
    Oosato, H.
    Da, B.
    Teraji, T.
    Kobayashi, A.
    Fujioka, H.
    Koide, Y.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (31)
  • [36] Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation
    Tsugawa, K
    Umezawa, H
    Kawarada, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3101 - 3107
  • [37] High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]
    Koide, Yasuo
    2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2019, : 40 - 46
  • [38] Review-Recent Trends on Junction-Less Field Effect Transistors in Terms of Device Topology, Modeling, and Application
    Raut, Pratikhya
    Nanda, Umakanta
    Panda, Deepak Kumar
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (03)
  • [39] An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors
    Liu, Jiangwei
    Koide, Yasuo
    SENSORS, 2018, 18 (06)
  • [40] Novel method of intrinsic characteristic extraction in lightly doped drain metal oxide semiconductor field effect transistors for accurate device modeling
    Tada, K
    Matsuoka, T
    Taniguchi, K
    Maeda, K
    Sakai, T
    Kubota, Y
    Imai, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 918 - 924
12345