Electronic processes in the porous silicon-conducting polymer heterostructures

The effect of an integrated polymer on the luminescence characteristics of porous silicon (PS)-conducting polymer (CP) heterostructures has been studied. Both n-(100) and p-type (111) PS has been employed in order to prepare the heterostructures. To obtain the integrated polymer layers (polyaniline, polymethoxy-aniline, polyphenylacetylene, poly-para-phenylene, poly-N-epoxy-propylearbazol), the methods of electrochemical polymerization, vacuum deposition, and spin coating have been used. The obtained structures were studied using atom force microscopy and were examined as to the capability to photoluminescence (PI.) and cathodoluminescence (CL). It has been found that the presence of a CP layer on the PS surface preserves the "red" PL, but weakens it to 50-90%. The CL spectra of the obtained heterostructures allow its to suggest their capability of electroluminescence in the visible region of the spectrum.