Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

被引：119
作者：
Turowski, M
Raman, A
Schrimpf, RD
机构：
[1] CFD Res Corp, Huntsville, AL 35805 USA
[2] Vanderbilt Univ, Nashville, TN 37235 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
MOSFET; radiation effects; radiation hardening; shallow-trench isolation (STI); simulation; subthreshold leakage current; three-dimensional (3-D) modeling; total dose; trapped charge;
D O I：
10.1109/TNS.2004.839201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new approach for modeling the radiation-induced charge distribution in shallow-trench isolation (STI) structures shows that much less charge is trapped near the top of the trench. We found that charges inside the STI oxide are pushed down by the vertical electric field coming from the positive gate bias, leaving much less total-dose-induced charge close to the top of trench. This nonuniformity significantly affects the measured leakage current.
引用
收藏
页码：3166 / 3171
页数：6
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