Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates

被引：36

作者：

Reed, MD ^{[1
]}

Kryliouk, OM ^{[1
]}

Mastro, MA ^{[1
]}

Anderson, TJ ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 274卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

characterization; substrates; hydride vapor-phase epitaxy; GaN; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2004.09.079

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-separating single-crystalline gallium nitride films were grown by hydride-metalorganic vapor-phase epitaxy (H-MOVPE) on LiAlO2 (LAO) substrates. Nitridation of the LAO substrate leads to the reconstruction of the surface and to the formation of a thin layer of nitrided material. Free-standing films of 35-40 mum thick were grown by a succession of techniques using both MOVPE and hydride vapor-phase epitaxy (HVPE) growth steps. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and micro-Raman spectroscopy to investigate the effect of the initial MOVPE step. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：14 / 20

页数：7

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