Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

被引：9

作者：

Iida, Daisuke ^{[1
]}

Lu, Shen ^{[1
]}

Hirahara, Sota ^{[1
]}

Niwa, Kazumasa ^{[2
]}

Kamiyama, Satoshi ^{[2
]}

Ohkawa, Kazuhiro ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1258585, Japan

[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期

关键词：

MG-DOPED GAN; BUFFER LAYER; INGAN; EMISSION; GROWTH; GAINN; FILMS;

D O I：

10.7567/JJAP.55.05FJ06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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