Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation

被引：49

作者：

Cooper, David ^{[1
]}

Ailliot, Cyril ^{[1
]}

Barnes, Jean-Paul ^{[1
]}

Hartmann, Jean-Michel ^{[1
]}

Salles, Phillipe ^{[2
]}

Benassayag, Gerard ^{[2
]}

Dunin-Borkowski, Rafal E. ^{[3
]}

机构：

[1] CEA, LETI, MINATEC, F-38054 Grenoble, France

[2] CNRS, CEMES, NMat Grp, F-31055 Toulouse, France

[3] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

来源：

ULTRAMICROSCOPY | 2010年 / 110卷 / 05期

关键词：

Dopant profiling; Off-axis electron holography; Focused ion beam milling; QUANTITATIVE-ANALYSIS; SPECIMENS; DAMAGE;

D O I：

10.1016/j.ultramic.2010.02.001

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Focused ion beam (FIB) milling is one of the few specimen preparation techniques that can be used to prepare parallel-sided specimens with nm-scale site specificity for examination using off-axis electron holography in the transmission electron microscope (TEM). However, FIB milling results in the implantation of Ga, the formation of amorphous surface layers and the introduction of defects deep into the specimens. Here we show that these effects can be reduced by lowering the operating voltage of the FIB and by annealing the specimens at low temperature. We also show that the electrically inactive thickness is dependent on both the operating voltage and type of ion used during FIB milling. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：383 / 389

页数：7

共 34 条

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