Low-Temperature Growth of Inverted Hexagonal ZnS/CdS Quantum Dots: Functional and Luminescence Properties

被引：3

作者：

Kumar, Hitanshu ^{[1
]}

Barman, P. B. ^{[1
]}

Singh, Ragini Raj ^{[1
]}

机构：

[1] Jaypee Univ Informat Technol, Dept Phys & Mat Sci, Solan 173234, HP, India

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 02期

关键词：

Quantum dots; inverted core/shell structures; electron microscopy; luminescence; FTIR; CORE/SHELL NANOCRYSTALS; NANOPARTICLES; ZNS; CDS;

D O I：

10.1007/s11664-014-3567-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel low-temperature wet chemical method is proposed for direct growth of type-I inverted hexagonal ZnS/CdS quantum dots (QD). 2-Mercaptoethanol (2-ME) was used as a capping agent for confinement by passivation, and also helped to prevent agglomeration of the QD. The band gap calculated from optical absorption spectra was 2.63 eV for the smallest core/shell QD. Absorption edge onset and results from transmission electron microscopy revealed formation of inverted core/shell QD. X-ray diffraction studies revealed the ZnS/CdS had a stable hexagonal crystal structure at low temperature. The average diameter of the core/shell QD was 4.2 nm. Tunable luminescence with substantial tunability was revealed by study of the photoluminescence of the inverted ZnS/CdS quantum dots. Surface passivation of ZnS/CdS QD by 2-ME was confirmed by Fourier-transform infrared spectroscopy.

引用

页码：675 / 681

页数：7

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