Effect of annealing temperature on properties of sputtered PZT thin films

被引：3

作者：

Zhu, Yi-Ping ^{[1
]}

Ren, Tian-Ling ^{[1
]}

Zhang, Ning-Xin ^{[1
]}

Liu, Li-Tian ^{[1
]}

Li, Zhi-Jian ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2007年 / 90卷

关键词：

PZT thin films; sputtering; annealing temperature; ferroelectric properties;

D O I：

10.1080/10584580601099041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary region were fabricated on the Pt(111)/Ti/SiO2/Si(100) multilayer substrate using sputtering method. An additional annealing treatment was carried out for one minute using a rapid thermal process (RTP) in oxygen atmosphere to improve densification and crystallization. The annealing temperature effects on crystal orientations and electric properties of PZT thin films were investigated. It has been found that the PZT thin film annealed at 650 degrees C shows the best crystalline structure and has the best dielectric and ferroelectric properties.

引用

页码：3 / 11

页数：9

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