Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

被引：23

作者：

Fischer, Inga Anita ^{[1
]}

Chang, Li-Te ^{[2
]}

Suergers, Christoph ^{[3
]}

Rolseth, Erlend ^{[1
]}

Reiter, Sebastian ^{[1
]}

Stefanov, Stefan ^{[4
]}

Chiussi, Stefano ^{[4
]}

Tang, Jianshi ^{[2
]}

Wang, Kang L. ^{[2
]}

Schulze, Joerg ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Halbleitertech IHT, D-70569 Stuttgart, Germany

[2] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[3] Karlsruhe Inst Technol, Inst Phys, D-76131 Karlsruhe, Germany

[4] Univ Vigo, EI Ind, Dpto Fis, Vigo 36310, Spain

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 22期

基金：

美国国家科学基金会;

关键词：

SILICON; LOGIC; METAL;

D O I：

10.1063/1.4903233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n(+)-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 40 条

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