Approaches to improving the accuracy in X-ray fluorescence analysis of Si1-x Ge x films

被引：3

作者：

Mashin, N. I. ^{[1
]}

Leont'eva, A. A. ^{[1
]}

Lebedeva, R. V. ^{[1
]}

Tumanova, A. N. ^{[1
]}

机构：

[1] NI Lobachevskii State Univ, Nizhnii Novgorod 603950, Russia

来源：

INORGANIC MATERIALS | 2010年 / 46卷 / 03期

关键词：

Germanium; Surface Density; Silicon Film; Germanium Film; Interelement Effect;

D O I：

10.1134/S0020168510030180

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work examines approaches to improving the accuracy in the X-ray fluorescence determination of the composition and thickness of thin Si1 - x Ge (x) films on Polikor alumina substrates. We calculate correction coefficients that take into account the interelement effects in the films and demonstrate the possibility of reaching the required accuracy level in determining film composition and thickness. The results are used to optimize conditions for the preparation of films with tailored electrical properties.

引用

页码：310 / 313

页数：4

共 10 条

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[3] Blokhin M.A., 1982, X-Ray Spectral Reference Book
[4] Brodsky M.H., 1979, Amorphous Semiconductors
[5] Ershov AV, 1999, IZV AKAD NAUK FIZ+, V63, P278
[6] ERSHOV AV, 1996, MAT ROSS K STRUKT SV, P67
[7] Grigorev I.S., 1991, Physical Quantities: Handbook
[8] KHOKHLOV AF, 1987, FIZ TEKH POLUPROV, V21, P1907
[9] KHOKHLOV AF, 1985, FIZ TEKH POLUPROV, V19, P2204
[10] RUDNEVSKII NK, 1985, ZAVODSK LAB, V51, P28

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