Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

被引：7

作者：

Wang, Jinxing ^{[2
,3
]}

Liu, Tianmo ^{[2
]}

Wang, Zhongchang ^{[1
]}

Bugiel, Eberhard ^{[3
]}

Laha, Apurba ^{[3
]}

Watahiki, Tatsuro ^{[4
]}

Shayduk, Roman ^{[4
]}

Braun, Wolfgang ^{[4
]}

Fissel, Andreas ^{[5
]}

Osten, Hans Joerg ^{[3
]}

机构：

[1] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400045, Peoples R China

[3] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

[4] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[5] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 07期

关键词：

Crystal growth; Electronic materials; Nanomaterials; Thin films; X-ray techniques; THIN-FILMS; SILICON; SI(111); GROWTH;

D O I：

10.1016/j.matlet.2010.01.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1-x)(2)O-3 (GNO), a multicomponent material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：866 / 868

页数：3

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