Effect of potassium doping for ultrasonic sprayed Cu2SnS3 thin films for solar cell application

被引：13

作者：

Ruan, Chengzhi ^{[1
,4
]}

Tao, Jiahua ^{[2
]}

Zhu, Chengyun ^{[3
,4
]}

Chen, Chen ^{[4
]}

机构：

[1] Wuyi Univ, Sch Mech & Elect Engn, Wuyishan 354300, Peoples R China

[2] East China Normal Univ, Sch Phys & Mat Sci, Shanghai 200241, Peoples R China

[3] Yancheng Teachers Univ, Sch New Energy & Elect Engn, Yancheng 224005, Peoples R China

[4] Jiangsu Univ, Sch Elect & Informat Engn, Zhenjiang 212013, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 15期

基金：

美国国家科学基金会; 中国博士后科学基金;

关键词：

OPTICAL-PROPERTIES; PRECURSORS; SULFURIZATION;

D O I：

10.1007/s10854-018-9401-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, potassium-containing Cu2SnS3 thin films (KxCu2-xSnS3) were fabricated by a simple and low-cost ultrasonic spray pyrolysis method on glass substrates with different potassium doping concentration. Effects of various potassium concentrations on the structural, morphological and optical properties of the films were systematically investigated. The results indicate that potassium doping can well enhance the growth of particle size and decrease the band gap of the film from to 1.55 to 1.26 eV. Solar cell devices with a structure of glass/FTO/K2-xCu2SnS3/CdS/ZnO/AZO have been prepared and obvious solar cell device performance improvement has been observed by 2 at% potassium doping. This potassium-containing Cu2SnS3 thin films could be a promising absorber material for high efficiency solar cell.

引用

页码：12824 / 12829

页数：6

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