Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition

被引：42

作者：

Milanov, Andrian P. ^{[1
]}

Xu, Ke ^{[1
]}

Laha, Apurba ^{[2
]}

Bugiel, Eberhard ^{[2
]}

Ranjith, Ramadurai ^{[2
]}

Schwendt, Dominik ^{[2
]}

Osten, H. Joerg ^{[2
]}

Parala, Harish ^{[1
]}

Fischer, Roland A. ^{[1
]}

Devi, Anjana ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44801 Bochum, Germany

[2] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2010年 / 132卷 / 01期

关键词：

OXIDES; MOCVD; ALD;

D O I：

10.1021/ja909102j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work documents the first example of deposition of high-quality Gd2O3 thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG)(3)]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the Substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.

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页码：36 / +

页数：4

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